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Samsung Elec to ramp up NAND flash from Xian, China, by 2019 at $7 bn invest

Collected: 2017.08.29

Distributed: 2017.08.30

Source: Go Direct

Samsung Electronics’ chip production facility in Xian, China. [Photo provided by Samsung Electronics]

Samsung Electronics Co., the world’s largest chipmaker, announced Monday that it will invest $7 billion over the next three years in its second-phase investment in its chip production facility in Xian, China to ramp up NAND flash output to ensure its predominance in the flash memory whose applications have been growing at an explosive pace amid cloud-based digitalization and automation.

The Xian plant operational since 2014 and yielding 100,000 3D flash wafers monthly will be able to roll out additional monthly volume of 100,000 units once expansion is finished and ready for production in 2019.

Samsung Electronics has been putting off the second-phase investment amid dispute with the expansion scale with Chinese authorities and supply concerns.

Already the dominant player in the NAND market with more than 35 percent share, Samsung Electronics would have unrivalled capacity with the two NAND bases in Xian and Pyeongtaek in Korea. It pledged to spend 37 trillion won ($33 billion) in the Pyeongtaek plant over the next years, which by 2021 would have monthly capacity of 240,000 NAND yields.

The board on Tuesday licensed the first tranche of $2.3 billion for expansion work in Xian.

The company earlier vowed to up this year’s facility investment from last year’s record spending of 25.5 trillion won, having already spent 22.5 trillion won in the first half.

At 2:15 p.m. shares of Samsung Electronics were down 0.6 percent at 2,291,000 won.

By Lee Dong-in

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