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Biz News Korea(Eng)
SK hynix unveils world’s first 321-layer NAND
- Collected
- 2023.08.10
- Distributed
- 2023.08.11
- Source
- Go Direct
![SK hynix Inc.’s 321-layer NAND. [Courtesy of SK hynix]](https://pulsenews.co.kr///file.mk.co.kr/meet/neds/2023/08/image_readtop_2023_610014_16916362505580272.jpg)
SK hynix Inc.’s 321-layer NAND. [Courtesy of SK hynix]
During the Flash Memory Summit that is taking place in Santa Clara in the U.S., SK hynix unveiled samples of its 321-layer NAND flash. The South Korean company plans to launch mass production in the first half of 2025 after enhancing quality.
NAND flash is a type of memory chip that retains data even when power is turned off. Stacking technology, which vertically arranges cells to increase data capacity, is a critical competitive factor, and there has been a fierce competition to develop ultra-high-layer NAND stacking technology.
More layers of memory cells allow larger capacity that can be produced on a single wafer.
The 300-layer milestone is considered a major threshold in the industry.
“With timely introduction of the high-performance and high-capacity NAND, we will strive to meet the requirements of the AI era and continue to lead innovation,” said Choi Jung-dal, head of NAND development at SK hynix.
Samsung Electronics Co. also began mass production of 236-layer NAND flash in November last year and announced plans to mass produce products with over 300 layers next year.
The company said that it plans to introduce a 1,000-layer product by 2030 after securing cost competitiveness.
By Oh Chan-jong and Chang Iou-chung
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